Enhanced vertical and lateral hole transport in high aluminum-containing AlGaN for deep ultraviolet light emitters
نویسندگان
چکیده
منابع مشابه
Hexagonal boron nitride for deep ultraviolet photonic devices
This paper provides a brief overview on recent advances in tackling the doping and optical polarization issues involved in the development of high performance deep ultraviolet (DUV) light emitting devices. In particular, recent developments in the exploitation of a novel DUV emitter layer structure based on a hexagonal boron nitride (hBN) and AlGaN p–n junction and doping engineering to potenti...
متن کاملTunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures
Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandga...
متن کاملAluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources
Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operation voltages. Here we show that these challenges can be addressed by utilizing nitrogen (N) polar...
متن کاملSurface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells
We report the development of complete structural AlGaN-based deep-ultraviolet light-emitting diodes with an aluminum thin layer for increasing light extraction efficiency. A 217% enhancement in peak photoluminescence intensity at 294 nm is observed. Cathodoluminescence measurement demonstrates that the internal quantum efficiency of the deep-UV LEDs coated with Al layer is not enhanced. The emi...
متن کاملStatus of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes
We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues ...
متن کامل